FDSS2407 |
RFQ for FDSS2407 Required Field |
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| Technical/Catalog Information | FDSS2407 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 62V |
| Current - Continuous Drain (Id) @ 25° C | 3.3A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 300pF @ 15V |
| Power - Max | 2.27W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4.3nC @ 5V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDSS2407 FDSS2407 |
| Product | Manufacturers | Pack | D/C |
| FDSS2407 | - | SOIC | 08+ |
This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1 A drain to source voltage feedback signal and 2. A gate drive disable control function that previously required external discrete circuitry. Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output
whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired "OR'd" together to a single input of the monitoring circuit. The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired "OR'd" allowing multiple devices to be controlled by a single open collector / drain control transistor.
Typical Application |
Features |
| Automotive Injector DriverSolenoid Driver | 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-85V Logic Level feedback signal of the drain to source voltage. Multiple devices can be wired "OR'd" to a single monitoring circuit input.Gate Drive Disable Input. Multiple devices controll able bya single disable transistor.Qualified to AEC Q101 |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 62 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID | Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W) |
3.3 | A |
| Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W) | 3.0 | A | |
| Pulsed | Figure 4 | A | |
| EAS | Single Pulse Avalanche Energy ( Note 1) | 140 | mJ |
| PD | Power dissipation | 2.27 | W |
| Derate above 25oC | 18 | mW/ | |
| TJ, TSTG | Operating and Storage Temperature | -55 to 150 |
